advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v fast switching characteristic r ds(on) 4m low on-resistance i d 20a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice 200806053 1 AP4430GEM rohs-compliant product parameter rating drain-source voltage 30 gate-source voltage 12 continuous drain current 3 20 continuous drain current 3 16 pulsed drain current 1 80 total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.02 thermal data parameter storage temperature range advanced power mosfets from apec provide the designer with the best combination of fast switching,ruggedized devic e design, ultra low on-resistance and cost-effectiveness. s s s g d d d d so-8 s g d the so-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 30 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.02 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 4 m v gs =4.5v, i d =16a - - 5 m ? ? ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =20a, v gs =0 v , - 46 - ns q rr reverse recovery charge di/dt=100a/s - 54 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP4430GEM 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 125 : /w when mounted on min. copper pad.
AP4430GEM fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. on-resistance vs. reverse diode drain current 3 0 20 40 60 80 0 0.4 0.8 1.2 1.6 2 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g = 2 .0v 0 20 40 60 80 01234 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 5.0v 4.5v v g = 2 .0v t a = 150 o c 2 4 6 8 0246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =16a t a =25 o c 0.6 1.0 1.4 1.8 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =20a v g =10v 0 4 8 12 16 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 2.0 4.0 6.0 0 20406080 i d , drain current (a) r ds(on) (m ?
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 AP4430GEM 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm t t 0.02 duty factor = t/t peak t j = p dm x r thja + t a r thja = 125 : /w 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 2 4 6 8 10 12 0 40 80 120 160 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =20a v ds =15v v ds =20v v ds =25v 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss q v g 4.5v q gs q gd q g charge 0 20 40 60 80 01234 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o ct j =25 o c v ds =5v
package outline : so-8 millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e1 3.80 3.90 4.00 e 5.80 6.15 6.50 l 0.38 0.71 1.27 0 4.00 8.00 e 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ advanced power electronics corp. c detail a a1 a 4430g em ywwsss package code part numbe r detail a l date code (ywwsss) y last digit of the year ww week sss sequence e b 1 34 5 6 7 8 2 d e1 e meet rohs requirement 5
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